By GuruFocus News
Publication Date: 2026-10-19 00:11:00
On October 18, 2026, industry insiders reported that Samsung Electronics is set to utilize TSMC’s 3-nanometer process to manufacture the base die for Nvidia’s next-generation custom high-bandwidth memory (NVHBM). This collaboration marks a significant milestone as it is the first time Samsung and TSMC are working together in the HBM manufacturing segment. Nvidia has requested that Samsung, SK Hynix, and Micron standardize their production processes for the NVHBM base die using TSMC’s advanced technology to ensure consistent product performance across all suppliers.
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What’s Behind the News?
The collaboration between Nvidia, Samsung, and TSMC is poised to enhance the production of high-bandwidth memory, which is critical for the performance of modern computing systems. The NVHBM is based on the seventh-generation HBM4E architecture, which aims to deliver higher performance and efficiency. This strategic partnership not only underscores Nvidia’s commitment to maintaining its competitive edge in the semiconductor industry but also reflects the growing importance of collaboration among leading technology firms to meet the increasing demands for advanced computing capabilities.
Nvidia Corp NVDA…
