By Ana Maria Constantin
Publication Date: 2026-10-19 15:49:00
Samsung Electronics will make a core part of Nvidia’s custom memory chips on TSMC’s 3-nanometre process. The Seoul Economic Daily reported the move on Sunday, citing industry sources. It would be the first time the two have worked together on making high-bandwidth memory (HBM).
The part is the base die, the logic layer at the bottom of an HBM stack. Until now, Samsung has made both the base die and the memory dies above it for all of its HBM. That is called a turnkey approach. It has decided to change that for Nvidia, according to the report.
What Nvidia asked for
NVHBM is Nvidia’s custom HBM, unveiled in August. Nvidia has asked all three of its NVHBM suppliers to make the base die on TSMC’s 3nm process. Those suppliers are Samsung, SK Hynix and Micron. Nvidia also wants the memory dies standardised on 1c, the sixth generation of DRAM technology. NVHBM uses the design of HBM4E, the seventh generation of HBM.
The reason is consistency, the newspaper said. When suppliers use different methods, one design is hard to make perform the same way across all of them. A common process also means Nvidia does not have to validate each supplier’s chips separately. Samsung’s Device Solutions division agreed after an internal review.
The two companies worked together four years ago, when Samsung made sure its HBM fitted TSMC’s packaging process.
Why the base die matters
NVHBM moves the memory controller off the GPU and onto the base die. That is…
