Samsung has its on Thursday 512 GB DDR5 RAM moduleAt 7,200 megabits per second, this is more than twice as fast as the DDR4. It aims to handle data-intensive supercomputing, AI and machine learning processes.
To compare this at the consumer level, Apple’sonly comes with 8 GB of RAM.
The module uses Through Silicon Via (TSV) technology to stack eight layers of 16 GB DRAM chips and achieve a capacity of 512 GB. Instead of the typical insulation layer, the HKMG (High-K Metal Gate) technology from Intel is also used, which is traditionally used in logical semiconductors rather than in memory. This enables higher chip densities with reduced power loss.
It will use around 13% less electricity, which is important for power-hungry data centers.
“By bringing this type of process innovation to DRAM manufacturing, we can offer our customers high-performance, yet energy-efficient storage solutions to power the computers needed for medical research, financial markets, autonomous driving, smart cities and beyond.” Young-Soo Sohn, vice president of the Samsung DRAM group, said in a press release.