SRAM With Mixed Signal Logic With Noise Immunity in 3nm Nanosheet (IBM)

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SRAM With Mixed Signal Logic With Noise Immunity in 3nm Nanosheet (IBM)

A new technical paper titled “SRAM and Mixed-Signal Logic With Noise Immunity in 3nm Nano-Sheet Technology” was published by researchers at IBM T. J. Watson Research Center and IBM.

Abstract
“A modular 4.26Mb SRAM based on a…

Article Source
https://semiengineering.com/sram-with-mixed-signal-logic-with-noise-immunity-in-3nm-nanosheet-ibm/

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