Samsung has announced a major breakthrough in DDR5 SDRAM design from Manufacture of a 512 GB DDR5 DIMM. Not only is it the most spacious RAM stick in the world, but Samsung also took first place in the Speed ​​Stakes, as the new sticks manage a ridiculous 7,200 Mbit / s.

This was made possible by Samsung’s TSV technology (which confusingly stands for Through Silicon Via), which allows eight memory chips to be stacked on top of one another. HKMG (High-K Metal Gate) materials are also used, which are traditionally reserved for logic semiconductors and not for memory. It is used here as a replacement for the usual insulation layer, since older insulation layers have become too thin with increasing density, which leads to a higher leakage current.

Source link

Leave a Reply