Samsung has announced the development of the industry’s first DDR5 memory Module with an insane capacity of 512 GB. The memory modules are geared towards AI / ML, exascale hyper-computing, analytics, networking and other data-intensive workloads.
Samsung DDR5 memory modules pack 512 GB capacity – Based on the HKMG process node and offer pin speeds of up to 7200 Mbit / s
Samsung states that the 512 GB DDR5 memory modules will expand its existing portfolio to offer the densest capacity ever produced. The memory modules will be equipped with the HKMG or High-K Metal Gate process node, which was also used by Samsung to manufacture its GDDR6 VRAM modules. The process node enables the memory modules to use 13% less power and also reduces power losses.
In terms of technical specifications, the Samsung 512 GB DDR5 memory offers twice the performance of DDR4 memory with speeds of up to 7200 Mbit / s. The memory has a total of 40 DRAM chips, with each DRAM chip containing eight layers of 16 Gbit DRAM modules that are stacked together and connected with TSVs (Through-Silicon-Via).
DDR5 module with a capacity of 512 GB, made possible by an 8-layer TSV structure
HKMG material reduces performance by 13 percent while doubling the speed of DDR4
Samsung Electronics, the world’s leading provider of advanced memory technology, announced today that it has added the industry’s first 512GB DDR5 module to its DDR5 DRAM memory portfolio based on the High-K Metal Gate (HKMG) process -Technology based. The new DDR5 offers more than double the performance of DDR4 at up to 7,200 megabits per second (Mbps) and is capable of handling the most extreme compute-intensive, high-bandwidth workloads in supercomputing, artificial intelligence (AI) and machine learning ( AI) to orchestrate ML) as well as data analysis applications.
“Samsung is the only semiconductor company with logic and memory functions and the know-how that incorporates the latest HKMG logic technology into the development of memory products,” said Young-Soo Sohn, vice president of the DRAM Memory Planning / Enabling Group at Samsung Electronics. “By bringing this type of process innovation to DRAM manufacturing, we can offer our customers high-performance, yet energy-efficient storage solutions to power the computers needed for medical research, financial markets, autonomous driving, smart cities, and beyond.”
“As the amount of data that needs to be moved, stored and processed increases exponentially, the transition to DDR5 comes at a critical turning point for cloud data centers, networks and edge deployments,” said Carolyn Duran, vice president and GM for storage and storage I / O technology at Intel. “Intel’s development teams are working closely with leading memory companies like Samsung to deliver fast, low-power DDR5 memory that is performance-optimized and compatible with our upcoming scalable Intel Xeon processors, codenamed Sapphire Rapids.”
Samsung’s DDR5 will use advanced HKMG technology traditionally used in logical semiconductors. With continued downsizing of the DRAM structures, the insulation layer has thinned, which leads to a higher leakage current. By replacing the isolator with HKMG material, Samsung’s DDR5 can reduce leakage and achieve new levels of performance. This new storage system also consumes approx. 13% less electricity and is therefore particularly suitable for data centers in which energy efficiency is becoming increasingly important.
The HKMG process was first adopted in the industry in Samsung’s GDDR6 memory in 2018. By expanding its use in DDR5, Samsung is further consolidating its leadership position in next-generation DRAM technology.
Samsung’s DDR5 uses Through-Silicon Via (TSV) technology and stacks eight layers of 16Gb DRAM chips to provide the largest capacity of 512GB. TSV was first used in DRAM in 2014 when Samsung introduced server modules with capacities of up to 256 GB.
Samsung is currently testing various variants of its DDR5 memory product family for customers to review and ultimately certify with its top of the line products to accelerate AI / ML, exascale computing, analytics, networking and other data-intensive workloads.
Samsung only states that different variants of its DDR5 memory are currently being sampled, but does not provide a start date. We can expect a launch by the end of this year as DDR5 memory platforms from Intel and AMD hit the shelves, and we can expect some really high prices for memory modules with this large capacity as well.