Intel has announced the release of its Intel 3 process, which promises up to 18% better performance with the same power for a full processor core. This new process also offers a flexible set of metal interconnect options and up to 10% higher density than Intel 4. According to Intel, this represents a significant leap in performance improvements within just one year.
Walid Hafez, vice president of foundry technology development at Intel, stated that the company’s five-node, four-year (5N4Y) goal of regaining leadership in industrial processes is now closer to completion with the introduction of the Intel 3 process.
The Intel 3 variants include:
– Intel 3-T, which is based on the base process and offers silicon vias (TSV) for 3D stacking applications such as image processing, high-performance computing, and artificial intelligence.
– Intel 3-E, which adds an I/O set for external interfaces, analog and mixed signal functions.
– Intel 3-PT, which combines all of the advancements of the other variants and adds further performance improvements along with superior ease of use for designers, including support for finer pitch 9um TSVs and hybrid bonding options for stacking.
Intel 3 is designed to be a durable node for foundry customers, providing a continuous progression of technology features and performance improvements to serve a wide range of design and product applications. Hafez emphasized that Intel is executing its 5N4Y plan consistently and is preparing for the transition to future process nodes such as the Intel 20A and Intel 18A over the next year.
In conclusion, Intel’s Intel 3 process is set to revolutionize the industry by delivering significant performance improvements and offering a range of advanced features for designers and foundry customers. This marks a major step towards Intel’s goal of regaining leadership in industrial processes and sets the stage for future advancements in semiconductor technology.
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https://www.electronicsweekly.com/news/business/843195-2024-06/
