At the recent VLSI Symposium, Intel unveiled details about its new manufacturing process, Intel 3, which will serve as the foundation for its foundry service aimed at high-performance data center clients. The Intel 3 process promises an 18 percent performance boost compared to its predecessor, Intel 4, while maintaining the same power consumption. This process marks the end of Intel’s use of FinFET technology, which the company introduced in 2011. However, Intel 3 also incorporates a new technology called metal dipole work function, which allows chip designers to choose transistors with different threshold voltages. This flexibility is crucial for optimizing performance in various types of circuits within a single chip.
Threshold voltage is a key parameter that determines when a device turns on or off. The metal and insulation in a transistor’s gate stack control the threshold voltage, with the thickness of the metal influencing this parameter. Historically, the thicker the metal, the lower the threshold voltage. However, as devices and circuits shrink in size, maintaining precise control over threshold voltage becomes challenging due to manufacturing variations. The Intel 3 process addresses this challenge by offering a narrow range of threshold voltages, which is essential for serving external foundry customers who demand strict control over this parameter.
Intel’s transition from a chip manufacturer to a foundry service provider necessitates a shift in approach, as external customers have different requirements compared to internal chip production. Intel’s emphasis on providing narrow threshold voltage variations reflects this shift and aligns with the needs of foundry customers who prioritize performance consistency. The metal dipole work function utilized in Intel 3 enables precise control over threshold voltage without being constrained by gate space, offering enhanced performance and efficiency.
Competitors like TSMC and Samsung have already integrated dipole technologies into their FinFET processes to meet customer demands. Intel’s introduction of dipole work function in Intel 3 represents a strategic move to remain competitive in the semiconductor market and cater to a wide range of customer needs. The technology is also a critical component in Intel’s future plans to offer high-performance chips for external clients.
In addition to the dipole work function, Intel 3 incorporates other advancements such as improved fin formation, enhanced transistor contacts, and reduced resistance and capacitance in interconnections. These enhancements contribute to the 18 percent performance gain offered by Intel 3 over its predecessor. The new process is being used to manufacture Intel’s Xeon 6 CPU and will be offered in three variations, including one optimized for 3D stacking applications.
Overall, Intel’s Intel 3 process represents a significant step towards fulfilling its goal of becoming a leading foundry service provider, offering cutting-edge technologies to meet the evolving needs of the semiconductor industry. The integration of metal dipole work function demonstrates Intel’s commitment to innovation and performance excellence in semiconductor manufacturing. Through strategic advancements like these, Intel is poised to remain a key player in the increasingly competitive semiconductor market.
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https://spectrum.ieee.org/amp/intel-foundry-finfet-2668562491
