By Anthony Garreffa
Publication Date: 2026-01-26 00:33:00
TL;DR: Samsung will unveil its next-generation HBM4 memory at NVIDIA GTC 2026, featuring speeds up to 11Gbps, surpassing JEDEC standards. Integrated into NVIDIA’s Vera Rubin AI platform, Samsung’s advanced HBM4 offers high bandwidth and energy efficiency, accelerating AI development and strengthening semiconductor innovation globally.
Samsung will debut its next-gen HBM4 memory at NVIDIA GTC 2026 in March, reportedly passing all of NVIDIA’s strict verification stages, and will arrive on NVIDIA’s next-gen Vera Rubin AI platform.
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Samsung has spent the last couple of years struggling with its HBM memory division, leaving its South Korean rival — SK hynix — to enjoy providing NVIDIA with all of its HBM3 and HBM3E needs. Samsung completely overhauled its HBM and semiconductor division in the last few years, with the fruits of that labor now showing.
NVIDIA will reportedly use its first allotments of HBM4 memory for Vera Rubin from Samsung, as Samsung’s new HBM4 memory is the best of the HBM4 offerings from its rivals in SK hynix and US-based Micron. Samsung’s new HBM4 memory is rated for above 11Gbps, much higher than JEDEC standards for HBM4, and was pushed and requested at those higher pin speeds from NVIDIA direct.
Samsung and NVIDIA are working together on HBM4, with Samsung explaining on its press release that with incredibly high bandwidth and energy efficiency, Samsung’s advanced HBM solutions are expected to help accelerate the…
